this is information on a product in full production. october 2012 doc id 15384 rev 3 1/9 9 2N3019HR hi-rel npn bipolar transistor 80 v, 1 a datasheet ? production data features hi-rel npn bipolar transistor linear gain characteristics escc qualified european preferred part list - eppl radiation level: lot specific total dose contact marketing for specified level description the 2N3019HR is a silicon planar epitaxial npn transistor in a to-39 package. it is specifically designed for aerospace hi-rel applications, and escc qualified in accordance with the 5201-003 specification. in case of discrepancies between this datasheet and escc detailed specification, the latter prevails. figure 1. internal schematic diagram bv ceo 80 v i c (max) 1 a h fe at 10 v - 150 ma > 100 operating temperature range -65c to +200c to-39 table 1. device summary order codes package lead finish marking type eppl packaging 2N3019HR to-39 gold solder dip 520101103 520101104 escc flight yes strip pack www.st.com
electrical ratings 2N3019HR 2/9 doc id 15384 rev 3 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 140 v v ceo collector-emitter voltage (i b = 0) 80 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 1 a p tot total dissipation at t amb 25 c total dissipation at t c 25 c 0.8 5 w w t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data symbol parameter value unit r thjc r thja thermal resistance junction-case __ max thermal resistance junction-ambient __ max 35 218 c/w c/w
2N3019HR electrical characteristics doc id 15384 rev 3 3/9 2 electrical characteristics t case = 25 c unless otherwise specified table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (i e = 0) v cb = 90 v v cb = 90 v, t amb = 150 c - 10 10 na a i ebo emitter cut-off current (i c = 0) v eb = 5 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 140 - v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2 % collector-emitter breakdown voltage (i b = 0) i c = 30 ma 80 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 7 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma - 0.2 0.5 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma, i b = 15 ma - 1.1 v h fe (1) dc current gain i c = 0.1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 150 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 1 a, v ce = 10 v i c = 150 ma, v ce = 10 v t amb = -65 c 50 90 100 50 15 40 - 200 300 200 h fe small signal current gain v ce = 10 v, i c = 50 ma f = 20 mhz 5-20 h fe small signal short circuit forward current transfer ratio v ce = 5 v, i c = 1 ma 80 - 400 c cbo output capacitance (i e = 0) v cb = 10 v, f = 1 mhz - 12 pf c ibo input capacitance (i c = 0) v eb = 0.5 v, f = 1 mhz - 60 pf nf noise figure v ce = 10 v, i c = 100 a r g = 1 k bandwidth = 200 hz -4db t c(cb) collector- base constant time v ce = 10 v, i c = 10 ma f = 79.8 mhz - 400 ps t on + t off pulse response v cc = 20 v, see figure 8 -30ns
electrical characteristics 2N3019HR 4/9 doc id 15384 rev 3 2.1 electrical characteristics (curves) figure 2. dc current gain (v ce =1 v) figure 3. dc current gain (v ce =10 v) figure 4. collector emitter saturation voltage figure 5. base emitter saturation voltage ! - v , f $ (
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